Nucleation of Silver (I) Oxide Investigated by Spectroscopic Ellipsometry
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چکیده
منابع مشابه
Investigation of SiC/Oxide Interface Structures by Spectroscopic Ellipsometry
We have investigated SiC/oxide interface structures by the use of spectroscopic ellipsometry. The depth profile of the optical constants of thermally grown oxide layers on SiC was obtained by observing the slope-shaped oxide layers, and the results suggest the existence of the interface layers, around 1 nm in thickness, having high refractive index than those of both SiC and SiO2. The wavelengt...
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ژورنال
عنوان ژورنال: Journal of The Electrochemical Society
سال: 1988
ISSN: 0013-4651,1945-7111
DOI: 10.1149/1.2096229